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1. product profile 1.1 general description 250 w ldmos power transistor for base st ation applications at frequencies from 1450 mhz to 1550 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf per carrier. carrier spacing 5 mhz. 1.2 features and benefits ? typical 2c-wcdma performance at frequen cies of 1476 mhz and 1511 mhz, a supply voltage of 28 v and an i dq of 1410 ma: ? average output power = 60 w ? power gain = 18.5 db ? efficiency = 33.0 % ? acpr = ? 32 dbc ? easy power control ? integrated esd protection ? enhanced ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (1450 mhz to 1550 mhz) ? internally matched for ease of use ? compliant to restriction of hazardous substances (rohs) directive 2002/95/ec ? integrated current sense BLF6G15L-250PBRN power ldmos transistor rev. 2 ? 3 november 2010 product data sheet table 1. typical performance typical rf performance at t case = 25 c in a class-ab production test circuit. mode of operation f v ds p l(av) g p d acpr (mhz) (v) (w) (db) (%) (dbc) 2c-wcdma 1476 to 1511 28 60 18.5 33.0 ? 32 [1] caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 2 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 1.3 applications ? rf power amplifiers for gsm, gsm edge , cdma and w-cdma and multi carrier applications in the 1450 mhz to 1550 mhz frequency range 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain1 2drain2 3gate1 4gate2 5source [1] 6, 7 sense drain 8, 9 sense gate 61 27 83 49 5 sym12 7 1 2 5 4 3 8, 9 6, 7 table 3. ordering information type number package name description version BLF6G15L-250PBRN - flanged ldmost ceramic package; 2 mounting holes; 8 leads sot1110a table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +11 v i d drain current - 64 a t stg storage temperature ? 65 +150 c t j junction temperature - 200 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l = 60 w (cw) 0.29 k/w
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 3 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 6. characteristics 7. application information table 6. characteristics t j = 25 c per section; unless otherwise specified symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 1.8 ma 65 75 - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 180 ma 1.4 1.9 2.4 v i dq quiescent drain current sense transistor: i ds = 20.1 ma; v ds =12v main transistor: v ds =28v 1.31 1.41 1.51 a i dss drain leakage current v gs =0v; v ds =28v --2.8 a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 25.3 29 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =9a 8.1 11.3 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =6.3a 0.03 0.1 0.16 table 7. rf performance mode of operation: 2-carrier w-cdma; pa r 7.5 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 1473.4 mhz; f 2 = 1478.4 mhz; f 3 = 1508.4 mhz; f 4 = 1513.4 mhz; rf performance at v ds =28v; i dq = 1410 ma; t case = 25 c; unless otherwise specified in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average output power - 60 - w g p power gain p l(av) = 60 w 16.5 18.5 - db rl in input return loss p l(av) = 60 w 8 12 - db d drain efficiency p l(av) = 60 w 30 33 - % acpr adjacent channel power ratio p l(av) = 60 w - ? 32 ? 27 dbc table 8. par performance mode of operation; 1-carrier w-cdma; pa r 7.5 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 1510.9 mhz; rf performance at v ds =28v; i dq =1410ma; t case =25 c; unless otherwise specified in a class-ab production test circuit. symbol parameter conditions min typ max unit par o output peak-to-average ratio p l(av) = 120 w at 0.01 % probability on ccdf 3.4 4.2 - db
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 4 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 7.1 ruggedness in class-ab operation the BLF6G15L-250PBRN is capable of withsta nding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1410 ma; p l = 200 w; f = 1475 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . table 9. phase binning off state s 11 measurement; v ds = 28 v; v gs = 0 v marking code input resonance frequency (ghz) min max 11.851.89 21.891.93 31.931.97 table 10. gain binning mode of operation: 2-carrier w-cdma; par 7.5 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 1473.4 mhz, f 2 = 1478.4 mhz; p l(av) =60w; v ds =28v; i dq = 1410 ma marking code gain at a center frequency of 1475.9 mhz in db min max bt 17.0 17.5 bu 17.5 18.0 bw 18.0 18.5 bx 18.5 19.0 table 11. typical impedance per section i dq = 950 ma; main transistor v ds = 28 v f z s [1] z l [1] (mhz) ( ) ( ) 1480 1.1 ? j2.8 2.3 ? j3.2 1510 1.3 ? j2.8 2.1 ? j2.8 fig 1. definition of transistor impedance 001aaf05 9 drain z l z s gate
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 5 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 7.3 graphs 7.3.1 cw (1) f = 1475 mhz (2) f = 1493 mhz (3) f = 1511 mhz (1) f = 1475 mhz (2) f = 1493 mhz (3) f = 1511 mhz fig 2. power gain and drain efficiency as function of output power; typical values fig 3. input return loss as a function of output power; typical values p l (w) 0 250 200 100 150 50 014aab101 18 19 17 20 21 g p (db) 16 30 40 20 50 60 d (%) 10 (1) (1) (3) (2) (2) (3) g p d p l (w) 0 250 200 100 150 50 014aab102 10 14 18 rl in (db) 6 (1) (2) (3)
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 6 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 7.3.2 is-95 is-95: par = 9.8 db at 0.01 % probability of the ccdf. (1) f = 1475 mhz (2) f = 1493 mhz (3) f = 1511 mhz is-95: par = 9.8 db at 0.01 % probability of the ccdf. (1) f = 1475 mhz (2) f = 1493 mhz (3) f = 1511 mhz fig 4. power gain and drain efficiency as function of output power; typical values fig 5. adjacent channel power ratio and peak-to-average power ratio as function of output power; typical values p l (w) 0 160 120 40 80 014aab099 18 17 19 20 g p (db) 16 30 20 40 50 d (%) 10 (2) (1) (3) (2) (3) (1) g p d p l (w) 0 160 120 40 80 014aab100 ? 55 ? 45 ? 65 ? 35 ? 25 acpr (dbc) pa r ? 75 5 7 3 9 11 1 (3) (1) (2) (3) (2) (1) (1) (2) (3) acpr 1980k acpr 885k par
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 7 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 7.3.3 2c-wcdma (5 mhz spacing) 8. test information [1] american technical ceramics type 800b or capacitor of same quality. [2] tdk or capacitor of same quality. [3] american technical ceramics type 100b or capacitor of same quality. 3gpp: test model 1; 64 dpch; par = 7.5 db at 0.01 % probability per carrier; 5 mhz carrier spacing. (1) f = 1475 mhz (2) f = 1493 mhz (3) f = 1511 mhz 3gpp: test model 1; 64 dpch; par = 7.5 db at 0.01 % probability per carrier; 5 mhz carrier spacing. (1) f = 1475 mhz (2) f = 1493 mhz (3) f = 1511 mhz fig 6. power gain and drain efficiency as function of output power; typical values fig 7. adjacent channel power ratio and peak-to-average power ratio as function of output power; typical values 014aab097 p l (w) 0 120 80 40 19 18 20 21 g p (db) 17 30 20 40 50 d (%) 10 (3) (2) (1) (2) (3) (1) g p d p l (w) 0 120 80 40 014aab098 ? 20 acpr (dbc) pa r ? 55 ? 50 ? 45 ? 40 ? 35 ? 30 ? 25 9 5.5 6 6.5 7 7.5 8.0 8.5 (1) (3) (3) (2) (2) (1) (3) (1) (2) acpr 10m acpr 5m par table 12. list of components see figure 8 for component layout. component description value remarks c1, c2, c3, c4 multi layer ce ramic chip capacitor 100 pf [1] c5, c6 multi layer cera mic chip capacitor 10 f [2] c7 multi layer ceramic chip capacitor 10 nf [2] on input gate line as shown c8 multi layer ceramic chip capacitor 100 nf [2] c10 multi layer ceramic chip capacitor 2.4 pf [1] c11 multi layer ceramic chip capacitor 3.6 pf [3] c12 electrolytic capacitor 470 f; 63 v c13, c14, c15, c16 multi layer ceramic chip capacitor 33 pf [3] r1 chip resistor 3.9 k philips 0603 r2 chip resistor 2.2 k philips 0603 r3 chip resistor 10 philips 0603 r4 chip resistor 0 philips 0603
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 8 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor printed-circuit board (pcb): taconic rf-35a2; r = 3.5 f/m; thickness = 0.762 mm; thickness copper plating = 35 m. the vias can be as a reference to place components. the above layout shows the test circui t used to measure the devices in produ ction. a more appropriate application demonstration for specific customer needs can be provided. see table 12 for list of components. fig 8. component layout nxp blf6g15l-250bprn output rev 03 nxp blf6g15l-250bprn input rev 03 + ? c13 c14 c1 c12 c5 c6 c15 c16 c3 c4 c2 c10 c11 r2 c7 r4 r1 r3 c8 014aab10 4
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 9 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 9. package outline fig 9. package outline sot1110a references outline version european projection issue date iec jedec jeita sot1110a 09-11-20 10-02-02 f langed ldmost ceramic package; 2 mounting holes; 8 leads sot1110 a b e e 1 q c d d 1 l a f a u 2 h a w 1 b d w 2 p b c q h 1 u 1 e w 3 b 1 4 5 3 2 8 9 61 7 sot1110a_po unit (1) mm max nom min 5.36 3.99 1.14 0.89 0.18 0.10 31.55 30.94 31.52 30.96 9.50 9.30 1.75 1.50 17.12 16.10 3.30 3.05 10.29 10.03 a dimensions bcdd 1 ee 1 9.53 9.27 fhh 1 25.53 25.27 pq (2) 2.26 2.01 q 35.56 u 1 41.28 41.02 u 2 w 1 0.51 inches max nom min 0.211 0.157 0.045 0.035 11.81 11.56 b 1 0.465 0.455 0.007 0.004 13.72 e 0.540 1.242 1.218 1.241 1.219 0.374 0.366 0.069 0.059 0.674 0.634 0.13 0.12 0.405 0.395 0.375 0.365 1.005 0.995 l 2.67 2.41 0.105 0.095 0.089 0.079 1.4 1.625 1.615 0.25 0.01 0.02 w 2 5.97 5.72 w 3 0.25 z 0.235 0.225 64 62 64 62 0.01 0 5 10 mm scale z note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. 3. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 10 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 10. abbreviations 11. revision history table 13. abbreviations acronym description ccdf complementary cumulative distribution function cdma code division multiple access cw continuous wave edge enhanced data rates for gsm evolution dpch dedicated physical channel gsm global system for mobile communications is-95 interim standard 95 ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor par peak-to-average power ratio rf radio frequency vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 14. revision history document id release date data sheet status change notice supersedes BLF6G15L-250PBRN v.2 20101103 product data sheet - BLF6G15L-250PBRN v.1 BLF6G15L-250PBRN v.1 20100914 preliminary data sheet - -
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 11 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BLF6G15L-250PBRN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 3 november 2010 12 of 13 nxp semiconductors BLF6G15L-250PBRN power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF6G15L-250PBRN power ldmos transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 3 november 2010 document identifier: BLF6G15L-250PBRN please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 4 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.3.1 cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.3.2 is-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.3.3 2c-wcdma (5 mhz spacing). . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information. . . . . . . . . . . . . . . . . . . . . 12 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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